This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.
Inhaltsverzeichnis
Strained-Si CMOS Technology. - High Current Drivability MOSFET Fabricated on Si(110) Surface. - Advanced High-Mobility Semiconductor-on-Insulator Materials. - Passivation and Characterization of Germanium Surfaces. - Interface Engineering for High-? Ge MOSFETs. - Effect of Surface Nitridation on the Electrical Characteristics of Germanium High-? /Metal Gate Metal-Oxide-Semiconductor Devices. - Modeling of Growth of High-? Oxides on Semiconductors. - Physical, Chemical, and Electrical Characterization of High-? Dielectrics on Ge and GaAs. - Point Defects in Stacks of High-? Metal Oxides on Ge: Contrast with the Si Case. - High ? Gate Dielectrics for Compound Semiconductors. - Interface Properties of High-? Dielectrics on Germanium. - A Theoretical View on the Dielectric Properties of Crystalline and Amorphous High-? Materials and Films. - Germanium Nanodevices and Technology. - Opportunities and Challenges of Germanium Channel MOSFETs. - Germanium Deep-Submicron p-FET and n-FET Devices, Fabricated on Germanium-On-Insulator Substrates. - Processing and Characterization of III V Compound Semiconductor MOSFETs Using Atomic Layer Deposited Gate Dielectrics. - Fabrication of MBE High-? MOSFETs in a Standard CMOS Flow.
