This book deals with the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production. Leading experts from industry and academia report in a very comprehensive way on the current state-of-the-art of the growth technologies and optical and structural properties of the GaN crystals are compared.
Inhaltsverzeichnis
Market for Bulk GaN Crystals. - Development of the Bulk GaN Substrate Market. - Vapor Phase Growth Technology. - Hydride Vapor Phase Epitaxy of GaN. - Growth of Bulk GaN Crystals by HVPE on Single Crystalline GaN Seeds. - Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy Using Void-Assisted Separation Technology. - Nonpolar and Semipolar GaN Growth by HVPE. - High Growth Rate MOVPE. - Solution Growth Technology. - Ammonothermal Growth of GaN Under Ammono-Basic Conditions. - A Pathway Toward Bulk Growth of GaN by the Ammonothermal Method. - Acidic Ammonothermal Growth Technology for GaN. - Flux Growth Technology. - High Pressure Solution Growth of Gallium Nitride. - A Brief Review on the Na-Flux Method Toward Growth of Large-Size GaN Crystal. - Low Pressure Solution Growth of Gallium Nitride. - Characterization of GaN Crystals. - Optical Properties of GaN Substrates. - Point Defects and Impurities in Bulk GaN Studied by Positron Annihilation Spectroscopy.